Bump Structure:

• 1P1M, Pillar on Pad w/ PI 

• 2P2M, Pillar on RDL w/ PI 

Process Capabilities:

• Wafer size: 12 inch 12 

• Dielectric Materials: PI or PBO 

• UBM: Ti /Cu Sputtering 

• RDL Line/Space: ≥5 mm/5 mm 

• Cu Pillar Pitch: ≥ 40um 

• Sn-Ag Bump Pitch: ≥150 mm 

• Bump Materials: Sn-Ag or Cu Pillar   Sn Cap